Speaker
Description
Organic field effect transistors (OFETs) need to be simulated on a large scale for facilitating real time applications. To ensure that transistor-based circuits operate reliably, they need to be objectively modelled for all the physical events that occur during the operation. However, the existing models are yet to be comprehensive enough to address many of the diverse electrical behaviors of OFETs. For instance, some OFETs show the peculiar behavior of polarity conversion which implies the drain current increasing in the opposite direction during low values of source -drain voltage for n -type material and vice versa for the p-type material. So far, no existing models are capable of addressing this anomalous trend in such OFET characteristics. Here we report a solution to this particular problem through necessary modifications introduced to a widely used OFET model. Further, using extracted experimental data of real time OFETs showing polarity inversion characteristics, the modified model has been shown to be highly effective not only for this particular problem but as a universal OFET model for all type of characteristics.
